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Analytical Model of Double Gate Stacked Oxide Junctionless Transistor Considering Source/Drain Depletion Effects for CMOS Low Power Applications |
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| Authors: | S. Manikandan N. B. Balamurugan D. Nirmal |
| Abstract: | This paper proposes a 2-D analytical model developed for Double Gate Junctionless Transistor with a SiO2/HfO2 stacked oxide structure. The model is solved |
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