Influence of oxygen on the parameters of a thin film copper phthalocyanine field effect transistor

The influence of oxygen on the electrical parameters of a copper phthalocyanine thin film field effect transistor was investigated by means of temperature‐modulated field effect spectroscopy. It was found that both the dark electrical conductivity and threshold voltage of the source–drain current versus gate voltage dependence were changed after oxygen exposure. Both effects can be effectively utilised for gas sensing. Copyright © 1999 John Wiley & Sons, Ltd.