| 界面极化效应对AlxGa1-xN/GaN异质结pin探测器光电响应的影响 |
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| 引用本文： | 周建军,江若琏,姬小利,谢自立,韩平,张荣,郑有炓.界面极化效应对AlxGa1-xN/GaN异质结pin探测器光电响应的影响[J].半导体学报,2007,28(6):947-950. |
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| 作者姓名： | 周建军 江若琏 姬小利 谢自立 韩平 张荣 郑有炓 |
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| 作者单位： | 南京大学物理系，江苏省光电信息功能材料重点实验室，南京 210093;南京大学物理系，江苏省光电信息功能材料重点实验室，南京 210093;南京大学物理系，江苏省光电信息功能材料重点实验室，南京 210093;南京大学物理系，江苏省光电信息功能材料重点实验室，南京 210093;南京大学物理系，江苏省光电信息功能材料重点实验室，南京 210093;南京大学物理系，江苏省光电信息功能材料重点实验室，南京 210093;南京大学物理系，江苏省光电信息功能材料重点实验室，南京 210093 |
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| 基金项目： | 国家重点基础研究发展计划(973计划)
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国家自然科学基金 |
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| 摘 要： | 设计了正面入射的探测波长范围限制在326～365nm的AlxGa1-xN/GaN异质结pin光电探测器.利用自洽求解薛定谔-泊松方程计算了AlxGa1-xN/GaN异质结在无极化、完全极化和部分极化的能带图,结合光电响应谱的模拟,分析了界面极化效应对AlxGa1-xN/GaN异质结pin紫外光电探测器响应特性的影响并提出了改善方法.
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| 关 键 词： | 极化效应 AlGaN/GaN异质结 pin探测器 |
| 收稿时间： | 11/2/2006 8:30:18 PM |
| 修稿时间： | 1/26/2007 5:03:22 PM |
Influence of Interface Polarization Effects on Photoelectric Response of AlGaN/GaN Heterojunction pin Photodetectors |
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| Zhou Jianjun,Jiang Ruolian,Ji Xiaoli,Xie Zili,Han Ping,Zhang Rong and Zheng Youdou.Influence of Interface Polarization Effects on Photoelectric Response of AlGaN/GaN Heterojunction pin Photodetectors[J].Chinese Journal of Semiconductors,2007,28(6):947-950. |
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| Authors: | Zhou Jianjun Jiang Ruolian Ji Xiaoli Xie Zili Han Ping Zhang Rong and Zheng Youdou |
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| Affiliation: | Key Laboratory of Advanced Photonic and Electronic Materials,Department of Physics,Nanjing University,Nanjing 210093,China;Key Laboratory of Advanced Photonic and Electronic Materials,Department of Physics,Nanjing University,Nanjing 210093,China;Key Laboratory of Advanced Photonic and Electronic Materials,Department of Physics,Nanjing University,Nanjing 210093,China;Key Laboratory of Advanced Photonic and Electronic Materials,Department of Physics,Nanjing University,Nanjing 210093,China;Key Laboratory of Advanced Photonic and Electronic Materials,Department of Physics,Nanjing University,Nanjing 210093,China;Key Laboratory of Advanced Photonic and Electronic Materials,Department of Physics,Nanjing University,Nanjing 210093,China;Key Laboratory of Advanced Photonic and Electronic Materials,Department of Physics,Nanjing University,Nanjing 210093,China |
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| Abstract: | A 326~365nm AlxGa1-xN/GaN heterojunction pin photodetector is designed.Energy band diagrams of this structure with complete polarization and partial polarization and without polarization are obtained by self-consistent Schrodinger-Poisson calculation.Meanwhile,the photoelectric response spectrum of the photodetector is simulated.Using the energy band diagram and photoelectric response spectrum,the influence of the interface polarization effects on the photoelectric response of the photodetector is analyzed. |
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| Keywords: | polarization effects AlGaN/GaN heterojunction pin photodetector |
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