| 一种新型的基于LDO的过流保护电路设计 |
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| 引用本文： | 樊华,冯全源. 一种新型的基于LDO的过流保护电路设计[J]. 微电子学与计算机, 2006, 23(2): 6-7 |
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| 作者姓名： | 樊华 冯全源 |
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| 作者单位： | 西南交通大学微电子研究所,四川,成都,610031 |
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| 基金项目： | 中国科学院资助项目;四川省学术与技术带头人培养基金 |
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| 摘 要： | 设计了一种基于低压差线形稳压器的Foldback过流保护电路。该Foldback过流保护电路的静态电流不超过0．94μA，极大地提高了电流利用率。该芯片采用TSMC0．6um、BiCMOS工艺生产制造。
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| 关 键 词： | Foldback过流保护 静态电流 Brokaw单元 |
| 文章编号： | 1000-7180（2006）02-006-02 |
| 收稿时间： | 2005-04-27 |
| 修稿时间： | 2005-04-27 |
A Novel Current Limiter Based on LDO |
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| FAN Hua,FENG Quan-yuan. A Novel Current Limiter Based on LDO[J]. Microelectronics & Computer, 2006, 23(2): 6-7 |
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| Authors: | FAN Hua FENG Quan-yuan |
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| Affiliation: | Institute of Microelectronics, Southwest Jiaotong University, Chengdu 610031 China |
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| Abstract: | A foldback current limiter with only 0.94 p,A quiescent current is presented and this current limiter is based on LDO chip. This chip is manufactured by TSMC 0.6urn, BiCMOS process. |
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| Keywords: | LDO |
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