High-transconductance n-type Si/SiGe modulation-doped field-effecttransistors |
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Authors: | Ismail K. Meyerson B.S. Rishton S. Chu J. Nelson S. Nocera J. |
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Affiliation: | IBM T.J. Watson Res. Center, Yorktown Heights, NY ; |
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Abstract: | The authors report on the fabrication and the resultant device characteristics of the first 0.25-μm gate-length field-effect transistor based on n-type modulation-doped Si/SiGe. Prepared using ultrahigh vacuum/chemical vapor deposition (UHV/CVD), the mobility and electron sheet charge density in the strained Si channel are 1500 (9500) cm2/V-s and 2.5×1012 (1.5×1012 ) cm-2 at 300 K (77 K). At 77 K, the devices have a current and transconductance of 325 mA/mm and 600 mS/mm, respectively. These values far exceed those found in Si MESFETs and are comparable to the best results achieved in GaAs/AlGaAs modulation-doped transistors |
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