Hafnium-ntype silicon Schottky barriers |
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Authors: | A Radziszewski T Skrabka |
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Affiliation: | Institute of Electron Technology, Wroc?aw, Poland |
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Abstract: | This paper describes the electrical properties of hafnium-/n-type/silicon contacts. These contacts were found to be Schottky barriers with a low barrier height. Polished and chemically cleaned 〈111〉 silicon wafers with a donor concentration Nd = 7 × 1022 m?3 were used to fabricate experimental Schottky barrier structures. For the Schottky barrier height φbn and the ideality factor n values were found of 0.47 V and 1.07–1.11, respectively. It is concluded that due to their low forward voltage drop and good rectifying properties, Hf-nSi contacts can be applied in microwave Schottky barrier diodes. |
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