Excess base noise in the bipolar junction transistor |
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Authors: | L.M. Rucker T.D. Davis |
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Affiliation: | Electrical Engineering Department, University of Texas at Arlington, Arlington, TX 75019, U.S.A. |
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Abstract: | It has been known for some time that the bipolar transistor base region exhibits a noise in excess of that predicted by thermal noise associated with the base spreading resistance measured by large- or small-signal methods. This paper presents a relatively simple mechanism and model involving a transconductance gradient that accounts for the excess noise. |
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