A review of ohmic and rectifying contacts on cadmium telluride

The state-of-the-art of contact formation on n and p-type cadmium telluride is discussed in this paper. We summarize the main surface properties, which influence the contact behavior, and the various technologies, which have been used to fabricate ohmic and rectifying contacts on CdTe. In this way MS and MIS structures, p-n junctions, and heterojunctions have been considered. In all cases we indicate the advantages and disadvantages of the electrical behavior of the devices.