Mobility fluctuation1/f noise in silicon p+-n-p transistors

A study of the current dependence of base 1/f noise and of collector 1/f noise in p⁺-n-p transistors shows that the former is most likely of the mobility fluctuation 1/f noise type and that the latter is most probably not of that type. The current dependence of 1/f noise in transistors is a powerful tool in the interpretation of the noise.