Oxidation and stress relief in air at room temperature of amorphous silicon hydrogenated in a glow discharge

Glow-discharge-hydrogenated amorphous silicon (a-Si : H) was found to be oxidized in the following two ways after exposing to air at room temperature; first, thin oxide films grew uniformly on the a-Si : H, slowly with increase of exposure time; secondly, oxide with a columnar morphology grew rapidly with the increase of exposure time and the cross section of the columnar oxide was small. Mechanical stress caused by the differences of the thermal expansion coefficient and the crystallographical structure between the a-Si : H and substrates was relieved with the increase in the amount of the columnar oxide.