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InGaAs-GaAs quantum dots for application in long wavelength (1.3 µm) resonant vertical cavity enhanced devices |
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| Authors: | M V Maximov I L Krestnikov Y M Shernyakov A E Zhukov N A Maleev Y G Musikhin V M Ustinov Zh I Alferov A Y Chernyshov N N Ledentsov D Bimberg T Maka C M Sotomayor Torres |
| Affiliation: | 1. A.F. Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St. Petersburg, Russia 2. Institute of Physics, St. Petersburg State University, Petrodvoretz, 198904, St. Petersburg, Russia 3. Institut für Festk?rperphysik, Technische Universit?t Berlin, D-10623, Berlin, Germany 4. Institute of Materials Science and Dept. of Electrical Engineering, University of Wuppertal, Gauss-Strasse 20, 42097, Wuppertal, Germany |
| Abstract: | Microcavity structures containing InGaAs-GaAs quantum dots (QDs) emitting at 1.3μm at 300 K have been studied. The energy distribution of excitons remains an nonequilibrium one up to room temperature due to high localization energies in these QDs. Carrier relaxation is found to proceed mainly via multiphonon processes. The luminescence emission from QDs in a microcavity exhibits a large spectral splitting of TE and TM components as observed in angle-resolved measurements amounting up to 10 nm for an angle of incidence of 30°. A 1.3 μm vertical cavity enhanced QD photodetector based on a single sheet of QDs is shown to have a quantum efficiency >10%. The ground state electroluminescence of a quantum dot resonant cavity light emitting diode shows no saturation up to 2 kAcm−2. |
| Keywords: | Quantum dot semiconductor microcavity 1 3 μm resonant cavity photodetector light emitting diode |
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