Nanowire‐Seeded Growth of Single‐Crystalline (010) β‐Ga2O3 Nanosheets with High Field‐Effect Electron Mobility and On/Off Current Ratio

2D β‐Ga₂O₃ nanosheets, as fundamental materials, have great potential in next generations of ultraviolet transparent electrodes, high‐temperature gas sensors, solar‐blind photodetectors, and power devices, while their synthesis and growth with high crystalline quality and well‐controlled orientation have not been reported yet. The present study demonstrates how to grow single‐crystalline ultrathin quasi‐hexagonal β‐Ga₂O₃ nanosheets with nanowire seeds and proposes a hierarchy‐oriented growth mechanism. The hierarchy‐oriented growth is initiated by epitaxial growth of a single‐crystalline $(\stackrel{?}{2}01)$β‐Ga₂O₃ nanowire on a GaN nanocrystal and followed by homoepitaxial growth of quasi‐hexagonal (010) β‐Ga₂O₃ nanosheets. The undoped 2D (010) β‐Ga₂O₃ nanosheet field effect transistor has a field‐effect electron mobility of 38 cm² V^?1 s^?1 and an on/off current ratio of 10⁷ with an average subthreshold swing of 150 mV dec^?1. The from‐nanowires‐to‐nanosheets technique paves a novel way to fabricate nanosheets, which has great impact on the field of nanomaterial synthesis and growth and the area of nanoelectronics as well.