Integration of silk protein in organic and light-emitting transistors |
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Authors: | Capelli R Amsden J J Generali G Toffanin S Benfenati V Muccini M Kaplan D L Omenetto F G Zamboni R |
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Affiliation: | Istituto per lo Studio dei Materiali Nanostrutturati, CNR, via P. Gobetti 101, 40129-Bologna, Italy. |
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Abstract: | We present the integration of a natural protein into electronic and optoelectronic devices by using silk fibroin as a thin film dielectric in an organic thin film field-effect transistor (OFET) ad an organic light emitting transistor device (OLET) structures. Both n- (perylene) and p-type (thiophene) silk-based OFETs are demonstrated. The measured electrical characteristics are in agreement with high-efficiency standard organic transistors, namely charge mobility of the order of 10(-2) cm(2)/Vs and on/off ratio of 10(4). The silk-based optolectronic element is an advanced unipolar n-type OLET that yields a light emission of 100nW. |
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