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Sn1-xBixO2纳米粉体的制备及其表征
引用本文:申乾宏,乔秀清,穆成法,陈乐生,樊先平,杨辉.Sn1-xBixO2纳米粉体的制备及其表征[J].电工材料,2012(3):3-6,10.
作者姓名:申乾宏  乔秀清  穆成法  陈乐生  樊先平  杨辉
作者单位:浙江大学材料科学与工程学系;浙江大学浙江加州国际纳米技术研究院;温州宏丰电工合金股份有限公司
摘    要:以SnCl4.5H2O和BiCl3为原料,采用化学共沉淀法制备了不同Bi掺杂量的SnO2纳米粉体,利用热重-差热(TG-DTA)、X射线衍射(XRD)和扫描电子显微镜(SEM)对制备的粉体进行了表征。结果表明,当Bi掺杂量低于30%时,SnO2纳米粉体的晶体结构保持为金红石四方相结构,Bi原子部分置换了Sn的位置;当掺杂量为30%时,开始形成杂质相BiOCl。掺杂Bi元素可细化SnO2纳米晶粒,经700℃焙烧后,未掺杂Bi元素的SnO2晶粒尺寸约为29 nm,而掺杂Bi元素的SnO2晶粒尺寸约为10 nm。此外,Bi元素的掺杂还可在一定程度上提高SnO2粉体的密度。

关 键 词:SnO2  Bi掺杂  纳米粉体  晶粒尺寸  密度  电接触材料

Synthesis and Characterization of Sn1-xBixO2 Nano-powder
SHEN Qian-hong,QIAO Xiu-qing,MU Cheng-fa,CHEN Le-sheng,FAN Xian-ping,YANG Hui.Synthesis and Characterization of Sn1-xBixO2 Nano-powder[J].Electrical Engineering Materials,2012(3):3-6,10.
Authors:SHEN Qian-hong  QIAO Xiu-qing  MU Cheng-fa  CHEN Le-sheng  FAN Xian-ping  YANG Hui
Affiliation:1,3(1.Department of Materials Science and Engineering,Zhejiang University,Hangzhou 310027,China;2.Wenzhou Hongfeng Electrical Alloy Co.,Ltd.,Zhejiang Wenzhou 325603,China;3.Zhejiang-California International NanoSystems Institute,Zhejiang University,Hangzhou 310029,China)
Abstract:Nano-crystalline of tin oxide doped with varying mol% of Bi3+ was prepared using chemical coprecipitation method and characterized by various techniques such as thermogravimetry and differential thermal analysis(TG-DTA),X-ray diffraction(XRD) and scanning electron microscopy(SEM).Results show that the nano-crystalline SnO2 maintains rutile structure when Bi doping concentration is less than 30% and the Bi atom-occupies the sites of Sn.When the doping concentration is 30%,impurity phase BiOCl begins to appear.Compared with the undoped SnO2,doping Bi element can decrease the crystal size of SnO2.The crystal size of pure nano-crystalline is about 29nm,while the crystal size of Bi-doped SnO2 is about 10nm.Moreover,doping Bi element can also increase the density of SnO2 powder to some extent.
Keywords:tin oxide  Bi doping  nano powder  crystal size  density  contact materials
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