| LED受ESD冲击前后性能的变化分析 |
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| 引用本文： | 陆海泉,李抒智,杨卫桥,严伟. LED受ESD冲击前后性能的变化分析[J]. 半导体技术, 2010, 35(10): 957-960. DOI: 10.3969/j.issn.1003-353x.2010.10.002 |
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| 作者姓名： | 陆海泉 李抒智 杨卫桥 严伟 |
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| 作者单位： | 上海北京大学微电子研究院,上海,201203;上海半导体照明工程技术研究中心,上海,201203 |
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| 摘 要： | 对GaN基蓝光LED施加ESD冲击,比较LED在受到ESD冲击前后I-V特性曲线、-5 V反向漏电流以及光色电特性的变化发现在I-V特性曲线和-5 V反向漏电流有明显变化的情况下,LED的光色电特性没有明显变化。选择在受到ESD冲击后反向漏电流值为不同数量级的LED作为样品进行加速老化实验,比较样品在加速老化实验前后的I-V特性曲线、光色电特性等参数的变化。通过比较样品之间的光衰减速率,发现反向漏电流大于1 mA时,样品的光衰减明显加快。
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| 关 键 词： | GaN 基蓝光LED 静电放电 I-V特性 反向漏电流 光色电特性 加速老化实验 |
Analysis of the Changes of LEDs Characteristics Before and After ESD Shock |
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| Lu Haiquan,Li Shuzhi,Yang Weiqiao,Yan Wei. Analysis of the Changes of LEDs Characteristics Before and After ESD Shock[J]. Semiconductor Technology, 2010, 35(10): 957-960. DOI: 10.3969/j.issn.1003-353x.2010.10.002 |
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| Authors: | Lu Haiquan Li Shuzhi Yang Weiqiao Yan Wei |
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| Affiliation: | Lu Haiquan1,Li Shuzhi2,Yang Weiqiao2,Yan Wei1(1.Shanghai Research Institute of Microelectronics,Peking University,Shanghai 201203,China,2.Shanghai Research Center of Engineering , Technology for Solid-State Lighting,China) |
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| Abstract: | I-V indicatrix,-5 V reverse leakage current and optical properties of LED were compared before and after ESD shock to the GaN-based blue LEDs.The results show that I-V indicatrix and-5 V reverse leakage current are observably changed,while optical properties have no changes.After ESD shock to the LEDs,an accelerated aging test was taken in different ordes of magnitude of reverse leakage,and the I-V indicatrix and optical properties were analyzed before and after the test.The results show that when the rever... |
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| Keywords: | GaN |
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