Si/Si1-x-yGexCy/Si heterojunctionbipolar transistors |
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| Authors: | Lanzerotti L.D. St. Amour A. Liu C.W. Sturm J.C. Watanabe J.K. Theodore D. |
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| Affiliation: | Dept. of Electr. Eng., Princeton Univ., NJ; |
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| Abstract: | We report the first Si/Si1-x-yGexCy /Si n-p-n heterojunction bipolar transistors and the first electrical bandgap measurements of strained Si1-x-yGex Cy on Si (100) substrates. The carbon compositions were measured by the shift between the Si1-x-yGexCy and Si1-xGex X-ray diffraction peaks. The temperature dependence of the HBT collector current demonstrates that carbon causes a shift in bandgap of +26 meV/%C for germanium fractions of x=0.2 and x=0.25. These results show that carbon reduces the strain in Si1-x Gex at a faster rate than it increases the bandgap (compared to reducing x in Si1-xGex), so that a Si 1-x-yGexCy film will have less strain than a Si1-xGex film with the same bandgap |
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