A GMR device based on a magnetic nanostructure with a $$\updelta $$-doping |
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| Authors: | Xu-Hui Liu Zheng-Hua Tang Yong-Hong Kong Xi Fu Yan-Jun Gong |
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| Affiliation: | 1.School of Science,Hunan University of Science and Engineering,Yongzhou,China;2.Key Laboratory of Comprehensive Utilization of Advantage Plants Resources in Hunan South,Hunan University of Science and Engineering,Yongzhou,China;3.Xiangnan University-Gospell Joint Laboratory of Microwave Communication Technology,Xiangnan University,Chenzhou,China |
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| Abstract: | We study how to manipulate by the \(\updelta \)-doping a giant magnetoresistance (GMR) device, which can be realized experimentally by depositing two parallel ferromagnetic stripes on top and bottom of the semiconductor \(\hbox {GaAs/Al}_{x}\hbox {Ga}_{1-x}\mathrm{As}\) heterostructure. We demonstrate an obvious GMR effect in the device with a \(\updelta \)-doping. We also reveal that the magnetoresistance ratio depends not only on the weight but also on the position of the \(\updelta \)-doping. These interesting results will be helpful for designing controllable GMR devices. |
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