High-temperature (T=490 K) operation of 5.8 /spl mu/m quantum cascade lasers with InP/GaInAs waveguides |
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| Authors: | Friedrich A Scarpa G Boehm G Amann M-C |
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| Affiliation: | Walter-Schottky Inst., Tech. Univ. Muenchen, Garching, Germany; |
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| Abstract: | 5.8 /spl mu/m Ga/sub 0.4/In/sub 0.6/As/Al/sub 0.56/In/sub 0.44/As strain-compensated quantum-cascade lasers with InP and GaInAs cladding layers using solid-source molecular-beam epitaxy have been fabricated. Low threshold current densities and high-temperature operation of uncoated devices, with a record value of 490 K, have been achieved in pulsed mode. |
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