Low loss channel waveguides fabricated in fused silica by germaniumion implantation

The authors report the first low loss channel waveguides (0.10 0.15 dB/cm) formed in fused silica by the implantation of MeV Ge ions. The loss coefficient α was measured as a function of ion dose (8×10¹³-8×10¹⁶ ion/cm²) and annealing temperature (250 to 600°C) at 1300 nm. The as-implanted waveguides exhibited a minimum value of α=0.9 dB/cm at an intermediate range of dose with a reduction to 0.10-0.15 dB/cm after annealing at 500°C