Observation of mobility enhancement in ultrathin SOI MOSFETs |
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| Authors: | Yoshimi M. Hazama H. Takahashi M. Kambayashi S. Tango H. |
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| Affiliation: | ULSI Res. Center, Toshiba Corp., Kawasaki; |
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| Abstract: | The mobility in n-channel SOI MOSFETs exhibits a significant increase as the SOI film becomes thinner than 1000 Å. At a 500 Å SOI thickness, the mobility values are distributed in the 700-1100 cm2/Vs range, which are obviously higher than the value in a bulk MOSFET having an identical doping concentration. The observed mobility enhancement has been explained by a decrease in the vertical electric field, associated with the complete depletion of the SOI film |
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