Optimization of structural and growth parameters of metamorphic InGaAs photovoltaic converters grown by MOCVD |
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Authors: | D. V. Rybalchenko S. A. Mintairov R. A. Salii M. Z. Shvarts N. Kh. Timoshina N. A. Kalyuzhnyy |
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Affiliation: | 1.Ioffe Physical–Technical Institute,Russian Academy of Sciences,St. Petersburg,Russia |
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Abstract: | Metamorphic Ga0.76In0.24As heterostructures for photovoltaic converters are grown by the MOCVD (metal–organic chemical vapor deposition) technique. It is found that, due to the valence-band offset at the p-In0.24Al0.76As/p-In0.24Ga0.76As (wide-gap window/emitter) heterointerface, a potential barrier for holes arises as a result of a low carrier concentration in the wide-gap material. The use of an InAlGaAs solid solution with an Al content lower than 40% makes it possible to raise the hole concentration in the widegap window up ~9 × 1018 cm–3 and completely remove the potential barrier, thereby reducing the series resistance of the device. The parameters of an GaInAs metamorphic buffer layer with a stepwise In content profile are calculated and its epitaxial growth conditions are optimized, which improves carrier collection from the n-GaInAs base region and provides a quantum efficiency of 83% at a wavelength of 1064 nm. Optimization of the metamorphic heterostructure of the photovoltaic converter results in that its conversion efficiency for laser light with a wavelength of 1064 nm is 38.5%. |
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