Performance characteristics of p-channel FinFETs with varied Si-fin extension lengths for source and drain contacts |
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| Authors: | Yue-Gie Liaw Wen-Shiang Liao Mu-Chun Wang Chii-Wen Chen Deshi Li Haoshuang Gu Xuecheng Zou |
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| Affiliation: | 1.Department of Electronic Science and Technology,Huazhong University of Science and Technology,Wuhan,P.R. China;2.Faculty of School of Electronic Information,Wuhan University,Wuhan,P.R. China;3.Faculty of Physics and Electronic Technology,Hubei University,Wuhan,P.R. China;4.Department of Electronic Engineering,Ming Hsin University of Science and Technology,Hsinchu,Taiwan |
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| Abstract: | The length of Source/Drain (S/D) extension (LSDE) of nano-node p-channel FinFETs (pFinFETs) on SOI wafer influencing the device performance is exposed, especially in drive current and gate/S/D leakage. In observation, the longer LSDEpFinFET provides a larger series resistance and degrades the drive current (IDS), but the isolation capability between the S/D contacts and the gate electrode is increased. The shorter LSDE plus the shorter channel length demonstrates a higher trans-conductance (G m ) contributing to a higher drive current. Moreover, the subthreshold swing (S.S.) at longer channel length and longer LSDE represents a higher value indicating the higher amount of the interface states which possibly deteriorate the channel mobility causing the lower drive current. |
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