| 高效率砷化镓崩越二极管的并联组合 |
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| 引用本文： | 陈水生,赵大德,万子鸿,张汝进. 高效率砷化镓崩越二极管的并联组合[J]. 固体电子学研究与进展, 1983, 0(4) |
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| 作者姓名： | 陈水生 赵大德 万子鸿 张汝进 |
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| 摘 要： | 本文叙述了高效率砷化镓崩越二极管的并联组合技术及多管芯并联器件的热设计;简单介绍了并联器件制造工艺;并给出了两管芯并联的实验结果:在X波段最大输出功率为5.4W,最佳效率达26.6%.
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Parallel Array of High Efficeny GaAs IMPATT Diodes |
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| Abstract: | This paper demonstrates the technique and the thermal design of high efficiency GaAs IMPATT diodes with parallel array, and simply pressentes the manufacturing technology of parallel array diodes. In Experiment a power output of 5.4W at X-band and maximum efficiency of 26.6% have obtained from two-chip parallel array. |
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