| Optimum Design for a Low Noise Amplifier in S-Band |
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| 引用本文： | Xin-Yan Gao Wen-Kai Xie Liang Tang. Optimum Design for a Low Noise Amplifier in S-Band[J]. 中国电子科技, 2007, 5(3): 234-237 |
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| 作者姓名： | Xin-Yan Gao Wen-Kai Xie Liang Tang |
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| 作者单位： | The authors arc with School of Physical Electronics, University of Electronic Science and Technology of China （UESTC）, Chengdu, 610054, China |
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| 摘 要： | An optimum design of a low noise amplifier （LNA） in S-band working at 2-4 GHz is described. Choosing FHC40LG high electronic mobility transistor （HEMT）, the noise figure of the designed amplifier simulated by Microwave Office is no more than 1.5 dB, meanwhile the gain is no less than 20 dB in the given bandwidth. The simulated results agree with the performance of the transistor itself well in consideration of its own minimum noise figure （0.3 dB） and associated gain （15.5 dB）. Simultaneously, the stability factor of the designed amplifier is no less than 1 in the given bandwidth.
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| 关 键 词： | 噪音放大器 噪音图形 S-参数 稳定因子 |
| 修稿时间： | 2006-12-31 |
Optimum Design for a Low Noise Amplifier in S-Band |
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| Xin-Yan Gao,Wen-Kai Xie,Liang Tang. Optimum Design for a Low Noise Amplifier in S-Band[J]. Journal of Electronic Science Technology of China, 2007, 5(3): 234-237 |
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| Authors: | Xin-Yan Gao Wen-Kai Xie Liang Tang |
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| Abstract: | An optimum design of a low noise amplifier (LNA) in S-band working at 2-4 GHz is described. Choosing FHC40LG high electronic mobility transistor (HEMT), the noise figure of the designed amplifier simulated by Microwave Office is no more than 1.5 dB, meanwhile the gain is no less than 20 dB in the given bandwidth. The simulated results agree with the performance of the transistor itself well in consideration of its own minimum noise figure (0.3 dB) and associated gain (15.5 dB). Simultaneously, the stability factor of the designed amplifier is no less than 1 in the given bandwidth. |
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| Keywords: | Gain low noise amplifier (LNA) noise figure (NF) S-parameters stability factor. |
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