Kink-free narrow-stripe proton-isolated GaAlAs/GaAs injection lasers |
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| Authors: | Lindstr?m C. Tihanyi P. |
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| Affiliation: | Institute of Microwave Technology, Stockholm, Sweden; |
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| Abstract: | Totally kink-free and very-narrow-stripe proton-isolated injection lasers are presented. The standard gold-indium metal-contact bonding system has been investigated, and as a result an improved bonding technique is presented. Kink-free lasers with output power up to 20 mW have been accelerated at 80°C ambient for 1000 h without any change in thermal resistance and with an expected lifetime of above 106 h at room temperature. |
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