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ZnMgO/ZnO异质结构中极化对二维电子气的影响
引用本文:周远明,田锋,钟才,梅菲,刘凌云,徐进霞,王远,张冉. ZnMgO/ZnO异质结构中极化对二维电子气的影响[J]. 材料导报, 2015, 29(12): 140-144. DOI: 10.11896/j.issn.1005-023X.2015.12.030
作者姓名:周远明  田锋  钟才  梅菲  刘凌云  徐进霞  王远  张冉
作者单位:湖北工业大学电气与电子工程学院,武汉 430068; 湖北工业大学太阳能高效利用湖北省协同创新中心,武汉 430068
基金项目:国家自然科学基金,湖北省教育厅科学研究计划项目,湖北省科技厅自然科学基金项目,太阳能高效利用湖北省协同创新中心开放基金
摘    要:基于 ZnMgO/ZnO 异质结构模型,从压电极化对应变弛豫度的依赖关系出发,通过自洽求解一维泊松-薛定谔方程,研究了 ZnMgO 势垒层的厚度、Mg 组分和应变弛豫度对 ZnMgO/ZnO 异质界面处二维电子气(2DEG)的分布、面密度等性质的影响,并结合极化和能带偏移对计算结果进行了分析讨论。结果表明通过改变 Mg 组分和应变弛豫度可以调节异质界面两边的极化强度不连续性,进而有效地调控异质结中的二维电子气。

关 键 词:ZnMgO/ZnO异质结  二维电子气  极化

Influence of Polarization on Two-dimensional Electron Gas in ZnMgO/ZnO Heterostructure
ZHOU Yuanming,TIAN Feng,ZHONG Cai,MEI Fei,LIU Lingyun,XU Jinxi,WANG Yuan and ZHANG Ran. Influence of Polarization on Two-dimensional Electron Gas in ZnMgO/ZnO Heterostructure[J]. Materials Review, 2015, 29(12): 140-144. DOI: 10.11896/j.issn.1005-023X.2015.12.030
Authors:ZHOU Yuanming  TIAN Feng  ZHONG Cai  MEI Fei  LIU Lingyun  XU Jinxi  WANG Yuan  ZHANG Ran
Affiliation:School of Electrical & Electronic Engineering, Hubei University of Technology, Wuhan 430068;Hubei Collaborative Innovation Center for High-efficiency Utilization of Solar Energy, Hubei University of Technology, Wuhan 430068,School of Electrical & Electronic Engineering, Hubei University of Technology, Wuhan 430068;Hubei Collaborative Innovation Center for High-efficiency Utilization of Solar Energy, Hubei University of Technology, Wuhan 430068,School of Electrical & Electronic Engineering, Hubei University of Technology, Wuhan 430068;Hubei Collaborative Innovation Center for High-efficiency Utilization of Solar Energy, Hubei University of Technology, Wuhan 430068,School of Electrical & Electronic Engineering, Hubei University of Technology, Wuhan 430068;Hubei Collaborative Innovation Center for High-efficiency Utilization of Solar Energy, Hubei University of Technology, Wuhan 430068,School of Electrical & Electronic Engineering, Hubei University of Technology, Wuhan 430068;Hubei Collaborative Innovation Center for High-efficiency Utilization of Solar Energy, Hubei University of Technology, Wuhan 430068,School of Electrical & Electronic Engineering, Hubei University of Technology, Wuhan 430068;Hubei Collaborative Innovation Center for High-efficiency Utilization of Solar Energy, Hubei University of Technology, Wuhan 430068,School of Electrical & Electronic Engineering, Hubei University of Technology, Wuhan 430068;Hubei Collaborative Innovation Center for High-efficiency Utilization of Solar Energy, Hubei University of Technology, Wuhan 430068 and School of Electrical & Electronic Engineering, Hubei University of Technology, Wuhan 430068;Hubei Collaborative Innovation Center for High-efficiency Utilization of Solar Energy, Hubei University of Technology, Wuhan 430068
Abstract:Based on the model of ZnMgO/ZnO heterostructure with relaxation-dependent piezoelectric polariza-tion,the distribution and the sheet concentration of two-dimensional electron gas (2DEG)in heterointerface for diffe-rent structural parameters were studied by solving the one-dimensional Poisson and Schr?dinger equations self-consis-tently.The influences of the thickness of ZnMgO barrier,the Mg content and the degree of strain relaxation were in-vestigated separately,and analyses for the corresponding results concerned with the polarization and the band offset were conducted.The computational results indicated that the polarization can be changed by altering the Mg content and the degree of strain relaxation,and thus the 2DEG can be controlled effectively.
Keywords:ZnMgO/ZnO heterostructure  two-dimensional electron gas  polarization
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