电子束与电阻复合蒸发法制备Zr-Cu非晶薄膜及性能表征

主要采用电子束蒸发与电阻蒸发复合镀膜系统制备Zr-Cu二元非晶薄膜,衬底基板无冷却装置。通过X射线衍射仪(XRD)、场发射透射电子显微镜(FE-TEM)、场发射扫描电子显微镜(FE-SEM)、微控四探针测量仪等仪器,系统地研究了样品沉积时间对薄膜厚度、微观结构、表面形貌以及电学性能的影响,另外还分析了与磁控溅射制备的Zr-Cu非晶样品的区别。结果显示,该复合镀膜技术制备的ZrxCu100-x非晶薄膜玻璃形成成分范围为x=30~85;薄膜的结构与性能对沉积时间比较敏感。样品随沉积时间的延长从非晶结构逐渐向非晶纳米晶复合结构转变;相比磁控溅射制备的薄膜样品,复合蒸发法制备的薄膜表面呈现较大尺寸的"团簇"形貌;样品的电阻率和方块电阻随沉积时间的延长逐渐减小。

Preparation and Characterization of Zr-Cu Amorphous Thin Film by E-beam and Resistance Composite Evaporation

Zr-Cu binary amorphous thin films were fabricated by e-beam and resistance composite evaporation coating system on a substrate without water cooling.Zr and Cu metals were deposited by electron beam and resistance evaporation source respectively.The influences of sample deposition time on film thickness,microstructure,morpho-logy and electrical properties were systematically studied through a number of instruments including X-ray diffractome-ter,transmission electron microscope,scanning electron microscope and micro-controlled four-probe measurement equipment.Its dissimilarity against Zr-Cu amorphous thin films prepared by magnetron sputtering were also analyzed. The results showed that the composite coating technology was able to prepare a wide range of glass forming composi-tion of Zrx Cu1 00-x amorphous thin films,x=30-85.It was found that the structure and properties of thin films were sensitive to sample deposition time.The sample gradually transformed from amorphous to amorphous matrix structure containing nanocrystals with the extension of deposition time.Compared to amorphous thin films fabricated by magne-tron sputtering,thin films derived via composite evaporation showed enhanced size of the cluster-like surface topogra-phy.Resistivity and sheet resistance of the samples decreased with the increase of deposition time.