利用晶硅切割废砂浆制备SiC粉体

以光伏产业晶硅切割废砂浆为主要原料,通过真空碳化法制备了 SiC 粉末。在通过物理和化学方法测定废砂浆组分含量的基础上,确定了初始原料 Si/C 配比。随后,利用 XRD 和 SEM 分别研究了真空热处理温度、无机碳源种类等对所制备粉末的物相和组织的影响,产物粉末的粒径分布范围通过激光粒度仪测试。研究表明,在900~1100℃温度范围,随着反应温度的升高,硅粉与活性炭的碳化反应越来越完全,并在1100℃完全生成了 SiC 粉末。继续升温,X 射线衍射峰的强度逐渐升高,SiC 产物粉末的粒度越来越大。此外,不同碳源在相同条件的碳化反应结果表明,活性炭作为碳源比石墨效果更佳。

Preparation of SiC Powder from Crystalline Silicon Cutting Waste Mortar

SiC powder was prepared from crystalline silicon cutting waste mortar in photovoltaic industry by the method of vacuum carbonization.The proportion of Si/C was determined on the basis of test result of components con-tent in waste mortar by physical and chemical methods.After that,the influences of vacuum heat treatment tempera-ture,inorganic carbon source types on the phase and structure of the powder were studied by using XRD and SEM. Particle size distribution was tested by laser particle size instrument.Researches showed that,with the increase of car-bonization temperature in the range of 900-1 100 ℃,the reaction of Si and activated carbon gradually progressed,and completely reacted at 1 100 ℃.When the temperature continued to be raised,X-ray diffraction peak intensity gradually increased,and particle size of SiC powder rose.In addition,carbonization reaction with different carbon sources under the same conditions inferred that activated carbon acted better as a carbon source than graphite.