A study of the oxidation behavior and the postannealing effect in a graded SiGe/Si heterostructure |
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| Authors: | Y S Lim J S Jeong J Y Lee H S Kim H K Shon H K Kim D W Moon |
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| Affiliation: | (1) Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, 305-701 Daejeon, Korea;(2) Present address: CRMC2-CNRS, 13288 Marseille, France;(3) Wireless Communication Devices Department, Basic Research Lab, Electronics and Telecommunications Research Institute, 305-350 Daejeon, Korea;(4) Department of Physics, Chungbuk National University, 361-763 Cheongju Chungbuk, Korea;(5) Nano Surface Group, Korea Research Institute of Standard and Science, 305-340 Daejeon, Korea |
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| Abstract: | A study on the dry thermal oxidation of a graded SiGe layer was performed. To reduce the Ge pileup effect during the thermal
oxidation, the SiGe layer was deposited with much lower Ge content near the free surface than near the SiGe/Si heterointerface.
After dry thermal oxidation at 900°C, the Ge composition in the pileup layer was significantly reduced and strain relaxation
by defect formation was prevented due to the graded Ge distribution. To homogenize the Ge distribution between the pileup
layer and remaining SiGe layer, the oxidized layers were postannealed. The homogenization is significantly enhanced by strain-induced
diffusion, and it was confirmed by uphill diffusion of Ge. This result can propose an alternative oxidation method of strained
SiGe/Si heterostructures. |
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| Keywords: | SiGe oxidation pileup postannealing strain-induced diffusion |
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