| Effect of Nickel Contamination on Formation of Denuded Zone in Czochralski Silicon |
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| 作者姓名： | Wu Dongdong Yang Deren Xi Zhenqiang Que Duanlin Zhong Yao |
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| 作者单位： | 浙江大学硅材料国家重点实验室，杭州 310027;浙江大学硅材料国家重点实验室，杭州 310027;浙江大学硅材料国家重点实验室，杭州 310027;浙江大学硅材料国家重点实验室，杭州 310027;中国空间技术研究院北京控制工程研究所,北京 100080 |
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| 基金项目： | 高等学校博士学科点专项科研项目
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高校新世纪人才基金
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中国科学院资助项目 |
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| 摘 要： | 研究了过渡族金属镍在快速热处理作用下对直拉单晶硅中洁净区形成的影响.实验结果发现:硅中魔幻洁净区(MDZ)形成后,氧沉淀及其诱生缺陷能有效地吸杂金属镍;而沾污金属镍的硅中,随后的快速热处理工艺不能形成MDZ,硅片近表面出现大量沉淀.采用传统的内吸杂工艺,镍沾污的次序对洁净区的形成没有影响.实验表明由于硅片表面形成的镍硅化合物的晶格常数比硅小,所以在硅片近表面产生高浓度的空位,导致近表面的氧依然能够在MDZ工艺中形成沉淀.
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| 关 键 词： | 硅 镍 洁净区 silicon nickel denuded zone 单晶硅 过渡族 金属镍 洁净区 影响 Silicon Czochralski Denuded Zone Formation Contamination Nickel vacancies zone critical concentration oxygen precipitation formation nickel silicide Based facts |
| 文章编号： | 0253-4177(2006)04-0623-04 |
| 收稿时间： | 10 27 2005 12:00AM |
| 修稿时间： | 12 24 2005 12:00AM |
Effect of Nickel Contamination on Formation of Denuded Zone in Czochralski Silicon |
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| Wu Dongdong,Yang Deren,Xi Zhenqiang,Que Duanlin,Zhong Yao.Effect of Nickel Contamination on Formation of Denuded Zone in Czochralski Silicon[J].Chinese Journal of Semiconductors,2006,27(4):623-626. |
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| Authors: | Wu Dongdong Yang Deren Xi Zhenqiang Que Duanlin and Zhong Yao |
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| Affiliation: | State Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 310027,China;State Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 310027,China;State Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 310027,China;State Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 310027,China;Beijing Institute of Control Engineering,Chinese Academy of Space Technology,Beijing 100080,China |
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| Abstract: | The effect of nickel contamination under rapid thermal processing (RTP) on the magic denuded zone (MDZ) in Czochralski silicon is investigated.It is found that the bulk defects can effectively getter nickel atoms once the MDZ forms.However,if the silicon sample is initially contaminated with nickel,the MDZ cannot form during the subsequent RTP,and a high density of precipitates occurs near the surface.In conventional IG processes,the DZ can form regardless of the nickel contamination sequence.Based on the facts,we propose that the formation of nickel silicide (Ni3Si) at the surface keeps the concentration of vacancies in the near-surface zone still higher than the critical concentration for oxygen precipitation under the subsequent RTP,which prevents MDZ formation. |
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| Keywords: | silicon nickel denuded zone |
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