A new two-dimensional threshold voltage model for cylindrical, fully-depleted, surrounding-gate (SG) MOSFETs期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

A new two-dimensional threshold voltage model for cylindrical, fully-depleted, surrounding-gate (SG) MOSFETs

Authors:	T.K. Chiang

Affiliation:	^aDepartment of Electronic Engineering, Southern Taiwan University of Technology, No.1, Nan-tai Street, Yung-kang City, Tainan County, Taiwan, ROC

Abstract:	Based on two-dimensional (2D) Poisson potential solution, a compact, analytical model for threshold voltage in cylindrical, fully-depleted, surrounding-gate (SG) MOSFETs is successfully derived. The minimum surface potential _min,surface is used to develop the threshold voltage model. Besides decreasing the characteristic factor, both the thin silicon body and gate oxide can reduce the threshold voltage roll-off simultaneously. It is also found that the threshold voltage shift is dependent on the scaling factor of λ₁L. The high scaling factor is preferred to alleviate threshold voltage degradation.

Keywords:
本文献已被 ScienceDirect 等数据库收录！