| BSTO/Mg2SiO4/MgO复合材料的介电性能研究 |
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| 引用本文： | 陈莹,董显林,高敏,梁瑞虹,曹菲. BSTO/Mg2SiO4/MgO复合材料的介电性能研究[J]. 无机材料学报, 2005, 20(4): 1013-1018 |
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| 作者姓名： | 陈莹 董显林 高敏 梁瑞虹 曹菲 |
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| 作者单位： | 中国科学院上海硅酸盐研究所,上海,200050 |
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| 基金项目： | 中国科学院创新基金(1730300400009) |
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| 摘 要： | 采用传统的电子陶瓷制备工艺制备了BSTO／Mg2SiO4／MgO复合材料，并对样品的结构及其介电性能进行了表征与分析，讨论了Mg2SiO4／MgO掺杂对BSTO／Mg2SiO4／MgO复合材料结构和性能的影响．结果表明，与前其他掺杂改性的BSTO复合材料相比，BSTO／Mg2SiO4／MgO复合材料不仅可以在较低的温度烧结致密，而且在介电常数降低的同时，仍能保持较高的可调性，如BSTO／39wt％Mg2SiO4／17wt％MgO的介电常数εr为-80．21，在2kV／mm的直流偏置电场下，其可调性达到-12％，介电损耗为-0．003．
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| 关 键 词： | 钛酸锶钡 复合材料 介电性能 可调性 |
| 文章编号： | 1000-324X(2005)04-1013-06 |
| 收稿时间： | 2004-07-06 |
| 修稿时间： | 2004-08-12 |
Dielectric Properties of BSTO/Mg2SiO4/MgO Ceramic Composites |
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| CHEN Ying,DONG Xian-Lin,GAO Min,LIANG Rui-hong,Cao Fei. Dielectric Properties of BSTO/Mg2SiO4/MgO Ceramic Composites[J]. Journal of Inorganic Materials, 2005, 20(4): 1013-1018 |
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| Authors: | CHEN Ying DONG Xian-Lin GAO Min LIANG Rui-hong Cao Fei |
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| Affiliation: | ShanghaiInstituteofCeramics;ChineseAcademyofSciences;Shanghai200050;China |
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| Abstract: | BSTO/Mg2Si04/MgO ceramic composites were fabricated by conventional ceramic processing. The microstructures and dielectric properties of the samples were measured and investigated systemically. The effects of the doping of Mg2SiO4/MgO on the microstructures and dielectric properties of BSTO/Mg2Si04/MgO ceramic composites were investigated. The results show that compared with the other BSTO ceramic composites, BSTO/Mg2SiO4/MgO ceramic composites not only can be sintered at a lower temperature but also keep a higher tunability while the dielectric constant decreases. The typical composition of BSTO/39wt/% Mg2SiO4/17wt% MgO has a dielectric constant of ~80.21, a dielectric loss of -0.003 and a tunability of ~12% under applying 2kV/mm dc bias field. |
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| Keywords: | Ba1-xSrxTiO3 (BSTO) ceramic composites dielectric properties tunability |
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