| 短沟道MOSFET散粒噪声测试方法研究 |
| |
| 引用本文： | 郑磊,杜磊,陈文豪.短沟道MOSFET散粒噪声测试方法研究[J].电子科技,2009,22(11):101-103. |
| |
| 作者姓名： | 郑磊 杜磊 陈文豪 |
| |
| 作者单位： | 西安电子科技大学,技术物理学院,陕西,西安,710071 |
| |
| 基金项目： | 国家部委"十一五"预研基金资助项目，西安应用材料创新基金资助项目 |
| |
| 摘 要： | 针对MOSFET散粒噪声难以测量的特点,提出了一种低温散粒噪声测试方法。在屏蔽环境下,将被测器件置于低温装置内,有效抑制了外界电磁波和热噪声的干扰,采用背景噪声足够低的放大器以及偏置器、适配器等,建立低温散粒噪声测试系统。应用本系统对短沟道MOSFET器件进行噪声测试,分析该器件散粒噪声的特性。
|
| 关 键 词： | 散粒噪声 扩散电流 沟道噪声 低温装置 |
Research on Shot Noise Measurement for Short-channel MOSFET Devices |
| |
| Zheng Lei,Du Lei,Chen Wenhao.Research on Shot Noise Measurement for Short-channel MOSFET Devices[J].Electronic Science and Technology,2009,22(11):101-103. |
| |
| Authors: | Zheng Lei Du Lei Chen Wenhao |
| |
| Affiliation: | Zheng Lei,Du Lei,Chen Wenhao(School of Technical Physics,Xidian University,Xi'an 710071,China) |
| |
| Abstract: | In view of the difficulty to measure shot noise in the short-channel MOSFET,this paper proposes a low temperature system,in which the device to be measured is put into a low temperature device in the shielding room in order to restrain the electromagnetic wave and thermal noise.The system adopts low noise amplifiers,adapters,and so on.Shot noise in the short-channel MOSFET is measured by this system with good results. |
| |
| Keywords: | shot noise diffuse current channel noise low-temperature device |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
|
