| GaAs MESFET脉冲微波功率器件瞬态热场模型 |
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| 引用本文： | 熊小明,郭世岭,周卫. GaAs MESFET脉冲微波功率器件瞬态热场模型[J]. 电子测量技术, 2006, 29(5): 51-54 |
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| 作者姓名： | 熊小明 郭世岭 周卫 |
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| 作者单位： | 航天二院23所专业部,北京,100854;航天二院23所专业部,北京,100854;航天二院23所专业部,北京,100854 |
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| 摘 要： | GaAsMESFET微波功率放大器工作在脉冲周期状态下,由于自热效应,在很短的时间内(100μs数量级),芯片沟道温度可能产生十几度甚至几十度的变化,这种剧烈的温度变化导致功放性能的变化也是不能忽略的。本文通过建立、求解热扩散方程及能量平衡方程,建立起沟道温度的一维瞬态热模型。
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| 关 键 词： | GaAsMESFET 脉冲微波功率放大器 自热效应 瞬态热模型 |
Transient-state thermal model of GaAs MESFET microwave pulsed power amplifier |
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| Xiong Xiaoming,Guo Shiling,Zhou Wei. Transient-state thermal model of GaAs MESFET microwave pulsed power amplifier[J]. Electronic Measurement Technology, 2006, 29(5): 51-54 |
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| Authors: | Xiong Xiaoming Guo Shiling Zhou Wei |
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| Abstract: | The temperature of chip channel rise in the GaAs MESFET microwave power amplifier which acts as pulse working state is sharp as the reason of self-heating effect. So the effect for the performance of the microwave power amplifier cannot be ignored as the sharp variety of temperature. The 1-D transient-state thermal model of microwave power amplifier is built in this paper by building and resolving the thermal diffusion equation and energy balance equation |
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| Keywords: | GaAs MESFET microwave pulsed power amplifier self-heating effect transient-state thermal model |
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