异质结能带不连续性的理论确定

本文首先证明,在经典理论中,把半导体内电位分布简单地用能级来表征的做法对异质结已不再适用.在承认经典电流密度方程和爱因斯坦关系成立的前提下,导出了半导体内电位分布同本征费米能级之间的普遍关系,并进一步得出确定突变异质结界面上导带不连续性△Ec数值的新定则.它比经典“亲和能定则”更为符合近年来用光电子能谱测量的实验结果.

Theoretical Determination of Energy Band Discontinuity in the Heterojunction

This paper demonstrates the unsuitability of characterizing the potential distribution of heterojunction simply by the intrinsic Fermi level in the classical theory.Recognizing the classical current density equations and Einstein relation, a generalized expression for the potential distribution and intrinsic Fermi level has been derived in the semiconductor. A new rule of determining the discontinuity △Ec at the interface of an abrupt heterojunction is obtained. An agreement with the photoelectron spectrum using the new rule is better than that using the affinity rule.