| Ag/Si(001)界面的LEED,AES和UPS研究(英文) |
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| 引用本文： | 张训生,闻华君,鲍德松,刘古. Ag/Si(001)界面的LEED,AES和UPS研究(英文)[J]. 固体电子学研究与进展, 1989, 0(4) |
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| 作者姓名： | 张训生 闻华君 鲍德松 刘古 |
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| 作者单位： | 浙江大学物理系(张训生，闻华君，鲍德松)，浙江大学物理系(刘古) |
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| 摘 要： |
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Investigation of Ag/Si(001) Interface by LEED,AES and UPS |
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| Abstract: | Si(001) surface is a more important surface for pratical application, but the study of metal-semiconductor interfaces on this surface is much less than on Si (111) surface. In this paper, the initial formation of the Ag/Si (001) interface is investigated by LEED, AES and UPS using He lamp. Results on room temperature adsorption of Ag on Si(001)(2×1) surface show a LEED pattern unchanged from the clean surface until gradual blurring. Being relative to the pure metal Ag, a shift and the shape of the 4d peak of Ag apprpted on Si (001) indicate that Ag/Si(001) is consistent with 2D island formation. With iacreasing coverage, the 4d peak shifts toward E while the second peak develops and thus intermixing Ag and Si atoms are formed. |
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