High density plasma treatment of polyimide substrate to improve structural and electrical properties of Ga-doped ZnO films |
| |
| Authors: | S.I. Kwon S.J. Lee T.H. Jung S.B. Park J.H. Park W.C. Song I.N. Kang D.G. Lim |
| |
| Affiliation: | aDepartment of Electronic Engineering, Chungju National University, 72 Daehak-ro, Chungju, Chungbuk 380-702, Republic of Korea;bResearch Institute of BINT New Technology, Chungju National University, 72 Daehak-ro, Chungju, Chungbuk 380-702, Republic of Korea;cDepartment of Chemistry, The Catholic University of Korea, 43-1 Yeokgok 2-dong, Wonmi-gu, Bucheon, Gyeonggi-do 420-743, Republic of Korea |
| |
| Abstract: | We investigated the effects of a high density O2 plasma treatment on the structural and electrical properties of sputter-deposited GZO films. The GZO films were deposited on polyimide substrate without substrate heating by RF magnetron sputtering from a ZnO target mixed with 5 wt.% Ga2O3. Prior to the GZO film growth, we treated a polyimide substrate with highly dense inductively coupled oxygen plasma. The optical transmittance of the GZO film, about 80%, was maintained regardless of the plasma pre-treatment. However, the resistivity of the film was strongly influenced by the plasma pre-treatment. The resistivity of the GZO film decreased from 1.02 × 10− 2 Ω cm without an O2 plasma pre-treatment to 1.89 × 10− 3 Ω cm with an O2 plasma pre-treatment. |
| |
| Keywords: | Plasma processing Sputtering Zinc Oxide Polyimide substrate |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
