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Low-pressure vapor-phase epitaxy of silicon on porous silicon |
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| Affiliation: | 1. Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong;2. Institute for Advanced Study, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong;1. Section Electron Microscopy, Department of Cell and Chemical Biology, Leiden University Medical Center, Leiden, The Netherlands;2. Molecular Virology laboratory, Department of Medical Microbiology, Leiden University Medical Center, Leiden, The Netherlands |
| Abstract: | Silicon has been deposited by low-pressure vapor-phase epitaxy (LPVPE) on porous silicon at much lower temperatures than in conventional CVD epitaxy. The epitaxy was performed at 823°C and 0.03 mbar using SiCl2H2. After preoxidation to stabilize the porous structure the surface of preoxidized porous silicon was chemically cleaned and finally thermally cleaned at temperatures below 860°C just before the epitaxial step. Epitaxial layers with very good crystalline quality as characterized by RBS channeling spectra and TEM cross sections were obtained. The original microstructure of porous silicon was only slightly modified during the epitaxial process. Full oxidation of the buried porous silicon layer was subsequently possible. |
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