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Passively Q-switched diode-pumped Yb:YAG laser using Cr-doped garnets |
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| Authors: | Y Kalisky C Labbe K Waichman L Kravchik U Rachum P Deng J Xu J Dong W Chen |
| Affiliation: | a “Arava” Laser Laboratory, Rotem Industrial Park, D.N. Arava, Mishor Yamin 86800, Israel b Laser Department, NuclearResearch Centre Negev, P.O. Box 9001, Beer Sheva 89140, Israel c Crystal Laboratory, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, P.O. Box 800-216, Shanghai 201800, China |
| Abstract: | We investigate the repetitive modulation in the kHz frequency domain of a passively Q-switched, diode-pumped Yb:YAG laser, by Cr4+:YAG, Cr4+:LuAG, and Cr4+:GSGG saturable absorbers. The results presented here are focused towards the design of a passively Q-switched Yb:YAG microlaser. The free-running performance of both rod and a disk Yb:YAG is characterized and experimental parameters such as gain and loss are evaluated. These values, together with the value of the stimulated emission cross-section, e.g. σem=3.3×10−20 cm2 were found to fit between our experimental results and an existing numerical model which relates the experimental and physical parameters to the minimal threshold pumping power. Q-switched pulses with maximum peak power of ≈10.4 kW, with energy of ≈0.5 mJ/pulse, were extracted with 30% extraction efficiency. |
| Keywords: | Diode pumped lasers Passive Q-switching Yb:YAG laser |
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