Photovoltaic effect in In/I-III-VI2-thin-film surface-barrier structures |
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| Authors: | V. Yu. Rud’ Yu. V. Rud’ I. V. Bodnar’ V. F. Gremenok O. S. Obraztsova S. L. Sergeev-Nekrasov |
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| Affiliation: | (1) St. Petersburg State Technical University, 195251 St. Petersburg, Russia;(2) A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia;(3) Belorussian State University of Information Science and Radio Engineering, 220027 Minsk, Belarus |
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| Abstract: | Surface-barrier structures have been prepared on films of the ternary compounds CuInTe2, AgGaTe2, and AgInTe2 and the solid solution Cu0.5Ag0.5InSe2. When these structures are illuminated, the photovoltaic effect is observed. It has been established that structures based on the ternary compound p-AgGaTe2 possess the highest photovoltaic sensitivity. It has been shown that films of I-III-VI2 compounds and the solid solution Cu0.5Ag0.5InSe2 obtained by laser deposition can be used to create wideband photoconverters of natural radiation. Fiz. Tekh. Poluprovodn. 32, 829–831 (July 1998) |
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