| (CoMgNi)O 系材料的高温缺陷研究 |
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| 引用本文： | 魏红 陈洪龄. (CoMgNi)O 系材料的高温缺陷研究[J]. 传感技术学报, 2000, 13(4): 292-296 |
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| 作者姓名： | 魏红 陈洪龄 |
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| 作者单位： | 1. 南京化工大学信息科学与工程学院，南京 210009
2. 南京化工大学化工学院，南京 210009 |
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| 摘 要： | 通过对（ＣｏＭｇＮｉ）Ｏ系氧敏材料的电导率与氧分压及电导率与温度的关系分析讨论了材料的氧敏机理和缺陷结构，由缺陷理论得出高温下材料的缺陷类型主要是单电离和双电离的金属缺位并导致ｐ型电导，由实验曲线得到了材料的某些参数。
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| 关 键 词： | 氧敏材料 （CoMgNi）O系 高温缺陷 氧传感器 |
| 修稿时间： | 2000-02-23 |
Study on High Temperature Defect Structure of (CoMgNi)O |
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| Wei Hong,CHEN Hongling. Study on High Temperature Defect Structure of (CoMgNi)O[J]. Journal of Transduction Technology, 2000, 13(4): 292-296 |
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| Authors: | Wei Hong CHEN Hongling |
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| Abstract: | Dependence of the electrical conductivity of (CoMgNi) O materials on the oxygen partial pressure and the temperature were investigated. Oxygen sensing machanism were studied. The results show that of the defects of the matierals appear to s ingly inoized and doubly ionized metal vacancies and give rise to a p-type cond uctivity. Some parameters are presented from the experimental curves. |
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| Keywords: | oxygen sensitive materials defect electrical conductivity oxygen partial p ressure |
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