Depth profiling of heavy-ion-mixed TiN films

A survey is given on the modifications of 30–300 nm thin TiN films on various substrates under high-fluence irradiation with 80–700 keV Ar, Kr and Xe ions. In particular, the effects of sputtering, interface mixing and blister formation were investigated. The results were obtained by combining several depth-profiling techniques, such as resonant nuclear reaction analysis (RNRA), Rutherford backscattering spectroscopy (RBS) and proton-induced X-ray emission (PIXE). Scanning electron microscopy and adhesion tests were also applied to the films. Optimal interface mixing parameters are proposed on the basis of the measured sputtering and mixing rates.