A compact model for multiterminal bipolar devices used in smartpower applications

Complex technologies merging low-voltage bipolar devices and vertical current-flow power transistor allow more smart functions at low chip cost but pose problems during the design phase because there is no way to predict the influence of the high-voltage transistor over the control components by using standard bipolar junction transistor (BJT) models. In fact the large inductive load usually present in high-voltage power transistors applications forces both negative substrate voltage and spurious currents that can induce positive feedback among parasitic devices, downgrading the performance of a single device and so of the whole circuit. In this work we introduce a model for the five-terminal bipolar devices used in smart power applications. The model accounts for all main static and dynamic parasitic effects and gives results in very good agreement with experimental data on both simple devices and complex integrated circuits currently implemented in commercial products for microprocessor based engine management systems (EMS's)