全封装的薄膜铌酸锂电光调制器（特邀）

高速电光调制器是宽带光通信网络和微波光子系统中的关键元器件之一。相对于体材料铌酸锂而言,薄膜铌酸锂材料由于其较强的光场限制能力,在构建小尺寸、宽带、低半波电压的高性能电光调制芯片上有独特的优势。文章基于薄膜铌酸锂材料研制了一种3 dB带宽不低于50 GHz的电光调制芯片,并采用光纤与波导水平端面耦合的光学封装方案和基于1.85 mm同轴接头的射频封装方案,实现了全封装的薄膜铌酸锂电光调制器。测量结果表明,封装后器件的光学插入损耗小于等于5 dB,3 dB带宽大于等于40 GHz,射频半波电压小于等于3 V@1 GHz。

Fully Packaged Thin Film Lithium Niobate Electro-Optic Modulator

High-speed electro-optic modulator is one of the key components in broadband optical communication networks and microwave photonic systems. Compared with the legacy lithium niobate, the thin-film lithium niobate material has unique advantages in constructing high-performance electro-optic modulation chips with small size, broadband and low half-wave voltage due to its strong optical field confinement ability. In this paper, an electro-optical modulation chip with a 3dB bandwidth not less than 50GHz was developed based on thin-film lithium niobate materials, and a fully packaged thin-film niobate electro-optic modulators was realized by using an optical packaging scheme of horizontal edge coupling between optical fiber and waveguide and a radio frequency packaging scheme based on 1.85mm coaxial connectors. Measurement results indicate that the optical insertion loss of the packaged device is less than or equal to 5dB, the 3dB bandwidth is greater than or equal to 40GHz, and the RF half-wave voltage is less than or equal to 3V@1GHz.