| Ku波段宽带氮化镓功率放大器MMIC |
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| 引用本文： | 余旭明,洪伟,王维波,张斌. Ku波段宽带氮化镓功率放大器MMIC[J]. 电子学报, 2015, 43(9): 1859-1863. DOI: 10.3969/j.issn.0372-2112.2015.09.026 |
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| 作者姓名： | 余旭明 洪伟 王维波 张斌 |
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| 作者单位： | 1. 东南大学毫米波国家重点实验室, 江苏南京 210096;2. 单片集成电路与模块国家重点实验室, 江苏南京 210016 |
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| 摘 要： | 基于0.25μm栅长GaN HEMT工艺,采用三级放大拓扑结构设计了一款Ku波段GaN功率放大器.放大器设计从建立大信号模型出发,输出匹配网络和级间匹配网络均采用电抗匹配减小电路的损耗,从而提高整体放大器的功率效率.测试结果表明,该放大器在14.6~18GHz频带内,小信号增益30dB,脉冲饱和输出功率达15W,功率附加效率(PAE)大于32%;在14.8GHz频点处,放大器的峰值功率达19.5W,PAE达39%.该结果表明GaN MMIC具有高频高功率高效率的优势,具有广阔的应用前景.
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| 关 键 词： | 氮化镓 功率放大器 微波集成电路 Ku波段 |
| 收稿时间： | 2014-04-04 |
Ku Band Power Amplifier MMlC Based on GaN HEMT Technology |
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| YU Xu-ming,HONG Wei,WANG Wei-bo,ZHANG Bin. Ku Band Power Amplifier MMlC Based on GaN HEMT Technology[J]. Acta Electronica Sinica, 2015, 43(9): 1859-1863. DOI: 10.3969/j.issn.0372-2112.2015.09.026 |
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| Authors: | YU Xu-ming HONG Wei WANG Wei-bo ZHANG Bin |
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| Affiliation: | 1. State Key Laboratory of Millimeter Waves, Southeast University, Nanjing, Jiangsu 210096, China;2. Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing, Jiangsu 210016, China |
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| Abstract: | A three stage Ku band GaN power amplifier MMIC was developed with 0.25 μm GaN HEMT technology.The MMIC was designed in micro-strip technology.Based on the large signal model,the amplifier adopted reactance matching network to reduce the insertion loss of the output stage,which improved its associated efficiency.The measurement results exhibited that this amplifier provided a flat small signal gain of 30dB and a pulsed saturated output power of 15W at the drain voltage of 28V over the 14.6~18GHz frequency range.At 14.8 GHz,a peak output power of 19.5W with power added efficiency of 39% was achieved. |
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| Keywords: | GaN HEMT power amplifier MMIC Ku-band |
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