A high-density MIM capacitor (13 fF//spl mu/m/sup 2/) using ALD HfO/sub 2/ dielectrics |
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Authors: | Xiongfei Yu Chunxiang Zhu Hang Hu Chin A Li MF Byung Jin Cho Dim-Lee Kwong Foo PD Ming Bin Yu |
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Affiliation: | Silicon Nano Device Lab., Nat. Univ. of Singapore, Singapore; |
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Abstract: | Metal-insulator-metal (MIM) capacitors with different HfO/sub 2/ thickness have been investigated. The results show that both the capacitance density and voltage coefficients of capacitance (VCCs) increase with decreasing HfO/sub 2/ thickness. In addition, it is found that the VCCs decrease logarithmically with increasing thickness. Furthermore, the MIM capacitor with 10-nm HfO/sub 2/ shows a record high capacitance density of 13 fF//spl mu/m/sup 2/ and a VCC of 607 ppm/V, which can meet the requirement of the International Technology Roadmap for Semiconductors. It can also provide a low leakage current of 5.95 /spl times/ 10/sup -8/A/cm/sup 2/ at room temperature at 1 V, low tangent values below 0.05, and a small frequency dependence. These results indicate that the devices are suitable for use in silicon integrated circuit applications. |
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