| MBE生长的PIN结构碲镉汞红外雪崩光电二极管 |
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| 引用本文： | 顾仁杰,沈川,王伟强,付祥良,郭余英,陈路. MBE生长的PIN结构碲镉汞红外雪崩光电二极管[J]. 红外与毫米波学报, 2013, 32(2): 136-140 |
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| 作者姓名： | 顾仁杰 沈川 王伟强 付祥良 郭余英 陈路 |
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| 作者单位： | 1. 中国科学院上海技术物理研究所,红外成像材料与器件重点实验室,上海200083;中国科学院研究生院,北京100049
2. 中国科学院上海技术物理研究所,红外成像材料与器件重点实验室,上海200083 |
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| 摘 要： | 对中波红外碲镉汞雪崩光电二极管(APD)特性进行理论计算,获得材料的能量散射因子及电离阈值能级与材料特性的相互关系,从而计算器件的理论雪崩增益与击穿电压.通过对材料特性(组分,外延厚度,掺杂浓度等)的优化,设计并生长了适合制备PIN结构红外雪崩光电二极管的碲镉汞材料,并进行了器件验证.结果显示,在10V反偏电压下,该器件电流增益可达335.
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| 关 键 词： | 碲镉汞 雪崩光电二极管 雪崩增益 击穿电压1 |
| 收稿时间： | 2012-03-09 |
| 修稿时间： | 2012-10-21 |
MBE growth HgCdTe avalanche photodiode based on PIN structure |
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| GU Ren-Jie,SHEN Chuan,WANG Wei-Qiang,FU Xiang-Liang,GUO Yu-Ying and CHEN Lu. MBE growth HgCdTe avalanche photodiode based on PIN structure[J]. Journal of Infrared and Millimeter Waves, 2013, 32(2): 136-140 |
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| Authors: | GU Ren-Jie SHEN Chuan WANG Wei-Qiang FU Xiang-Liang GUO Yu-Ying CHEN Lu |
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| Affiliation: | Shanghai Institute of Technical Physics,Shanghai Institute of Technical Physics,Shanghai Institute of Technical Physics,Shanghai Institute of Technical Physics,Shanghai Institute of Technical Physics,Shanghai Institute of Technical Physics |
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| Abstract: | A theoretical calculation result of HgCdTe (x=0.3) avalanche photodiodes (APDs) based on PIN structure is obtained in the paper. The energy dispersion factor and the threshold energy are acquired according to the parameters of material. And the gain, as well as the breakdown voltage, are obtained. The composition, thickness, doping level are calculated theoretically to get an optimized APD device. Afterwards a PIN HgCdTe is grown by MBE and a high performance APD device is fabricated which achieves a gain of 335 at the bias voltage of -10V. |
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| Keywords: | HgCdTe, APD, gain, breakdown voltage |
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