| p型扩散区(SiO2/Si系扩Ga)的俄歇分析 |
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| 引用本文： | 孙瑛,王凤英. p型扩散区(SiO2/Si系扩Ga)的俄歇分析[J]. 半导体学报, 2002, 23(10): 1088-1092. DOI: 10.3969/j.issn.1674-4926.2002.10.016 |
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| 作者姓名： | 孙瑛 王凤英 |
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| 作者单位： | 1. 山东师范大学,济南,250014;2. 济南半导体研究所,济南,250014 |
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| 摘 要： | 采用Ga在SiO2/Si系扩散途径,对扩Ga硅片进行了俄歇分析,在p型区未发现重金属杂质,表明热氧化SiO2层对外来重金属有良好的屏蔽作用,而且有利于提高硅器件的电参数性能、稳定性和可靠性.
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| 关 键 词： | SiO2层 镓扩散 重金属杂质 俄歇分析 |
| 文章编号： | 0253-4177(2002)10-1088-05 |
| 修稿时间： | 2002-01-05 |
Auger Analysis on p-Type Diffusion Laye (Using Diffusion Galium in SiO2 Series) |
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| Sun Ying and Wang Fengying. Auger Analysis on p-Type Diffusion Laye (Using Diffusion Galium in SiO2 Series)[J]. Chinese Journal of Semiconductors, 2002, 23(10): 1088-1092. DOI: 10.3969/j.issn.1674-4926.2002.10.016 |
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| Authors: | Sun Ying and Wang Fengying |
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| Affiliation: | Sun Ying 1 and Wang Fengying 2 |
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| Abstract: | Using the diffusion of galium in SiO_2/Si series,Auger analysis of gallium-diffused silicon wafer is made.No heavy metal is found in SiO_2-p-type diffusion layer.This indicates that SiO_2 layer shields the heavy metal impurities effectively,and favors to improve the properties of electric parameter,the stability and reliability of silicon components. |
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| Keywords: | SiO_2 layer gallium diffusion heavy metal impurities Auger analysis |
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