双极线性集成电路低剂量率辐射的增强损伤

综合介绍了双极线性集成电路在低剂量率辐射下产徨的异常损伤，既在低剂量率下辐射时，这些器件在很低的总剂量水平下即告失效，失效阈较高剂量率辐射要低得多，它是因为构成线性电路的双极器件发射极一基极结上覆盖了厚氧化物，低剂量率电离辐射在氧化物内产生电荷的传输时间有时要达到数百秒，氧化物内存在的过量电荷使器件产生增强损伤。

Enhanced Damage in Bipolar Linaer Integrated Circuits at Low Dose Rate Irradiations

The anomolous damage was summarized in bipolar linear integrated circuits at low dose rate irradiations. When irradiated at low dose rate,these devices failed at very low total dose level. The failure threshold was much lower than that in high dose rate ,it was concerned with the thick oxide cover on emitter base junction of bipolar devices in linear circuits. The transport time of charge produced in oxide sometimes reaches a few hundred seconds by the ionizing radiation at low dose rate,. The over charge in oxide yields enhanced damage of device.