| CuO掺杂对BaZn_2Ti_4O_(11)陶瓷微波介电性能的影响 |
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| 引用本文： | 李俊杰,何茗. CuO掺杂对BaZn_2Ti_4O_(11)陶瓷微波介电性能的影响[J]. 电子元件与材料, 2012, 31(4): 4-6,17 |
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| 作者姓名： | 李俊杰 何茗 |
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| 作者单位： | 1. 成都电子机械高等专科学校电气系,四川 成都,610031
2. 成都电子机械高等专科学校电气系,四川 成都610031;电子科技大学微电子与固体电子学院, 四川成都 610054 |
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| 基金项目： | 四川省教育厅基金资助项目(No.11ZD15) |
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| 摘 要： | 采用固相反应法制备了CuO掺杂的BaZn2Ti4O11陶瓷,研究了所制陶瓷的物相、微观结构和微波介电性能。结果表明,CuO既可以在晶界处形成低共熔体,导致液相烧结,降低烧结温度40℃,又可使部分Cu2+进入晶格取代了部分Zn2+,增加Q.f值。掺杂质量分数0.5%的CuO在1 160℃烧结2 h所制得BaZn2Ti4O11陶瓷的微波介电性能较佳:相对介电常数εr=29.4,Q.f=50 500 GHz,频率温度系数τf=–35.6×10–6/℃。
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| 关 键 词： | 微波介质陶瓷 介电性能 BaZn2Ti4O11 CuO掺杂 |
Effect of CuO additive on the microwave dielectric properties of BaZn2Ti4O11 ceramics |
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| LI Junjie , HE Ming. Effect of CuO additive on the microwave dielectric properties of BaZn2Ti4O11 ceramics[J]. Electronic Components & Materials, 2012, 31(4): 4-6,17 |
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| Authors: | LI Junjie HE Ming |
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| Affiliation: | 1,2(1.Electric and Electron Engineering Department,Chengdu Electromechanical College,Chengdu 610031,China;2.School of Microelectronics and Solid-State Electronics,University of Electronic Science and Technology of China,Chengdu 610054,China) |
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| Abstract: | CuO-doped BaZn2Ti4O11 ceramics were prepared by the solid-state reaction method.The phase composition,microstructure and microwave dielectric properties of the prepared ceramics were investigated.The results show that CuO additive could cause the liquid-phase sintering with a reduction of 40 ℃ for the sintering temperature.Moreover,Cu2+ could substitute for Zn2+ in BaZn2Ti4O11 crystal structure,which leads to the increase of the Q?f value.At last,0.5%(mass fraction) CuO-doped BaZn2Ti4O11 ceramics are sintered well at 1 160 ℃ for 2 h and show good microwave dielectric properties: the relative permittivity of εr=29.4,Q?f =50 500 GHz and the temperature coefficient of resonant frequency of τf= –35.6×10–6 /℃. |
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| Keywords: | microwave dielectric ceramics dielectric properties BaZn2Ti4O11 CuO-doping |
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